Complementary characterization method of 3D arsenic doping by using medium energy ion scattering
نویسندگان
چکیده
Abstract We report on a new characterization method of 3D—doping performed by arsenic implantation into FinFET—like nanostructures using Medium Energy Ion Scattering. Because its good depth resolution (0.25 nm) at the surface, it is one techniques choice suitable to analyse ultra-shallow doping thin crystal films. However, with constraints related nanostructures’ geometry and low lateral MEIS beam (0.5 × 1 mm 2 ), we developed an adequate protocol allowing their analysis this technique. It encompasses three different geometries account for spectra implanted in each part nanostructures. The originality that, according chosen geometry, overall spectrum not same because contributions patterns formation are different. By two them, observed double peaks arsenic. Thanks 3D deconvolutions PowerMEIS simulations, were able identify contribution tops, sidewalls bottoms formation. Thus, separating dopants Fins (tops + sidewalls) from that bottoms, characterize conformity patterns. Two methods associated local doses computed single investigated. found distribution conventional implanter very plasma doping.
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ژورنال
عنوان ژورنال: Journal of physics communications
سال: 2021
ISSN: ['2399-6528']
DOI: https://doi.org/10.1088/2399-6528/abbdcf